Towards control of plasma-induced surface roughness: simultaneous to plasma etching deposition
نویسندگان
چکیده
منابع مشابه
Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2 ÕAr plasma etching
We study the effects of plasma etching on the evolution of surface roughness of GaN and AlN. The etch-induced roughness is investigated using atomic force microscopy by systematically varying plasma power, chamber pressure, and Cl2 /Ar mixture gas composition. GaN etches three to four times more rapidly than AlN for identical plasma conditions. For both GaN and AlN, we find that the surface rou...
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Ge, B, P-doped silica glass films are widely used as optical waveguides because of their low losses and inherent compatibility with silica optical fibers. These films were etched by ICP !inductively coupled plasma" with chrome etch masks, which were patterned by reactive ion etching !RIE" using chlorine-based gases. In some cases, the etched surfaces of silica glass were very rough !root-mean s...
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ژورنال
عنوان ژورنال: The European Physical Journal Applied Physics
سال: 2011
ISSN: 1286-0042,1286-0050
DOI: 10.1051/epjap/2011110205